Ultrawide bandgap materials

Ultrawide Bandgap Nano Devices

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B9 L2 R2325

This seminar explores how nanoscale device architectures can unlock new functionalities in ultrawide bandgap (UWBG) materials beyond conventional applications.

Yan Wang

Ph.D. Student, Photonics Laboratory
M.S./Ph.D. in Electrical Engineering at King Abdullah University of Science and Technology (KAUST), Saudi Arabia, Aug. 2024- present BEng. in Communication Engineering at University of Electronic Science and Technology of China (UESTC), Chengdu, China, Sept. 2019 - Jun. 2024​
KAUST-CEMSE-ECE-PhD-Dissertation-Defense-Dhanu-Chetri-Ultrawide-Bandgap-Semiconductor-Devices-and-Monolithic-Circuits

Ultrawide Bandgap Semiconductor Devices and Monolithic Circuits

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B3 L5 R5220

This thesis investigates the potential of ultrawide bandgap (UWBG) semiconductors like gallium oxide (Ga2O3) and aluminium nitride (AlN) for high-power applications, focusing on the development of monolithic devices and circuits, including pseudo-CMOS inverters, bidirectional switches, and MOSFETs, demonstrating their potential for next-generation electronics operating in extreme environments.

Tingang Liu

Tingang Liu is a Ph.D. student at the Advanced Semiconductor Laboratory, focusing on ultrawide bandgap semiconductors especially AlN epitaxy by MOCVD and power device fabrications.

Glen Isaac Maciel García

Ph.D. Student, Applied Physics

Haicheng Cao

Postdoctoral Research Fellow, Applied Mathematics and Computational Science
KAUST-CEMSE-ECE-ASL-Dhanu-Chettri-0561

Dhanu Chettri